click to buy information furnished by linear integrated systems and micross components is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. features ? direct ? replacement ? for ? intersil ? 3n166 ? absolute ? maximum ? ratings 1 @ ? 25c ? (unless ? otherwise ? noted) ? maximum ? temperatures ? storage ? temperature ?\ 65c ? to ? +200c ? operating ? junction ? temperature ?\ 55c ? to ? +150c ? lead ? temperature ? (soldering, ? 10 ? sec.) ? +300c ? maximum ? power ? dissipation ? continuous ? power ? dissipation ? (one ? side) ? 300mw ? total ? derating ? above ? 25c 4.2 ? mw/c ? maximum ? current drain ? current ? 50ma ? maximum ? voltages ? drain ? to ? gate or ? drain ? to ? source 2 ?\ 30v ? peak ? gate ? to ? source 3 125v ? gate \ gate ? voltage ? 80v ? 3n166 ? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristic ? min ? typ. ? max ? units ? conditions ? i gssr ? gate ? reverse ? leakage ? current ? \\? \\? 10 ?? ? pa ? v gs ? = ?\ 0v ? i gssf ? gate ? forward ? current ?? \\? \\? \ 10 ? v gs ? = ?\ 40v ? ? t a = ? +125c ? \\? \\? \ 25 ? i dss ? drain ? to ? source ? leakage ? current ? \\? \\? \ 200 ? v ds ? = ?\ 20v ? i sds ? source ? to ? drain ? leakage ? current ? \\? \\? \ 400 ? v sd ? = ?\ 20v ?? v db ? = ? 0 ? i d ( on ) ? drain ? current ? ?on? ?\ 5.0 ? \\? \ 30 ? ma ? v ds ? = ?\ 15v, ?? v gs ? = ?\ 10v ? v gs(th) ? gate ? to ? source ? threshold ? voltage ?\ 2.0 ? \\? \ 5.0 ? v ? v ds ? = ?\ 15v, ??? i d ? = ?\ 10a ? \ 2.0 ? \\? \ 5.0 ? v ds ? = ?? v gs ? , ??? i d ? = ?\ 10a ? r ds ( on ) ? drain ? to ? source ? ?on? ? resistance ? \\? \\? 300 ?? v gs ? = ?\ 20v, ??? i d ? = ?\ 100a ? g fs ? forward ? transconductance ? 1500 ? \\? 3000 ? s ? v ds ? = ?\ 15v, ???? i d ? = ?\ 10ma ? , ??? f ? = ? 1khz ? g os ? output ? admittance ? \\? \\? 300 ? c iss ?? input ? capacitance ? \\? \\? 3 ?? pf ? ? v ds ? = ?\ 15v, ???? i d ? = ?\ 10ma ? , ??? f ? = ? 1mhz 4 ? c rss ? reverse ? transfer ? capacitance ? \\? \\? 0.7 ? c oss ? output ? capacitance ? \\? \\? 3.0 ? r e (y fs ) ? common ? source ? forward ? transconductance ? 1200 ? \\? \\? s ? v ds ? = ?\ 15v, ???? i d ? = ?\ 10ma ? , ??? f ? = ? 100mhz 4 ? matching ? characteristics ? 3n166 ??????????????????????????????????????????????????????????????? ??????????????????????????????????????????????????????????????? ??????? ? symbol ? characteristic ? limits ?? units ? ? conditions ? min ? max ? y fs1 /y fs2 ? ? forward ? transconductance ? ratio ? 0.90 ? 1.0 ? ns ? v ds ? = ?\ 15v, ???? i d ? = ?\ 500a ? , ??? f ? = ? mhz 4 ? v gs1 \ 2 ? gate ? source ? threshold ? voltage ? differential ? \\? 100 ? mv ? v ds ? = ?\ 15v, ???? i d ? = ?\ 500a ? ? v gs1 \ 2 / ? t ? gate ? source ? threshold ? voltage ? differential ? change ? with ? temperature ? \\? 100 ? v/c ? v ds ? = ?\ 15v, ???? i d ? = ?\ 500a ? t a ? = ?\ 55c ? to ? = ? +25c ? ? ? ?? ?????????????????????????????????? switching ? test ? circuit ? the 3n166 is a monolithic dual e nhancement mode p-channel mosfet 3n166 p-channel mosfet note ? 1 ?\? absolute ? maximum ? ratings ? are ? limiting ? values ? above ? which ? 3n166 serviceability ? may ? be ? impaired. ? * note ? 2 ? ? ? per ? transistor ? note ? 3 ? ? ? device ? must ? not ? be ? tested ? at ? 125v ? more ? than ? once ? or ? longer ? than ? 300ms. ? note ? 4 ? ? ? for ? design ? reference ? only, ? not ? 100% ? tested the 3n166 is a dual enhancement mode p-channel mosfet and is ideal for spac e constrained applications and those requiring tight electrical matching. the hermetically sealed to-78 package is well suited for high reliability and harsh environment applications. (see packaging information). tel: +44 1603 788967 email: chipcomponents@micross.com web: http://www.micross.com/distribution device schematic to-78 (bottom view) available packages: 3n166 in to-72 3n166 in bare die. please contact micross for full package and die dimensions 3n166 features: ? very high input impedance ? low capacitance ? high gain ? high gate breakdown voltage ? low threshold voltage switching waveform & test circuit *to ? avoid ? possible ? damage ? to ? the ? device ? while ? wiring, ? testing, ? or ? in ? actual ? operation, ? follow ? these ? procedures: ? to ? avoid ? the ? build \ up ? of ? static ? charge, ? the ? leads ? of ? the ? devices ? should ? remain ? shorted ? together ? with ? a ? metal ? ring ? except ? when ? being ? tested ? or ? used. ? avoid ? unnecessary ? handling. ? pick ? up ? devices ? by ? the ? case ? instead ? of ? the ? leads. ? do ? not ? insert ? or ? remove ? devices ? from ? circuits ? with ? the ? power ? on, ? as ? transient ? voltages ? may ? cause ? permanant ? damage ? to ? the ? devices. ?
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